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1

Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers

L. G. Lavrent'eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 388 KB

english, 2002

2

Vapour phase epitaxial grown GaAs films with a very low deep level concentration

V.V. Chaldyshev, E.V. Astrova, A.A. Lebedev, I.A. Bobrovnikova, N.A. Chernov, O.M. Ivleva, L.G. Lavrentieva, I.V. Teterkina, M.D. Vilisova

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 308 KB

english, 1995

3

[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Interpolation Type Schemes Application to Analysis of Electromagnetic Field Propagation

Kravchenko, O. V., Egorov, D. P., Vilisova, N. T., Churikov, D. V., Titov, A. D.

Year:

2019

File:

PDF, 373 KB

2019

4

The theory of nonlinear systems as an instrument for solving engineering problems

Ohrimenko, Olga I., Maltsev, Igor M., Rokotyanskaya, Violetta V., Vilisova, Maria L., Gross, H.-G., Khaled, H., Abbasian Najafabadi, T., Nguyen, D.A., Kudish, I., Sevostyanov, I.B., Cen, Y.G., Egiazar

Journal:

MATEC Web of Conferences

Year:

2018

File:

PDF, 91 KB

2018

5

Structure and properties of epitaxial layers of InxGa1−xAs grown from the gas phase

M. D. Vilisova, I. A. Bobrovnikova, I. V. Teterkina, N. A. Chernov, M. P. Yakubenya

Journal:

Russian Physics Journal

Year:

1992

Language:

english

File:

PDF, 639 KB

english, 1992

6

Physical Properties of Solid Solutions InxAl1–xN

Brudnyi, V. N., Vilisova, M. D., Velikovskii, L. É.

Journal:

Russian Physics Journal

Year:

2018

File:

PDF, 273 KB

2018

7

Epitaxial gaas p-n junctions grown in a closed iodide system with various iodine concentrations

L. G. Lavrent'eva, M. D. Vilisova, S. P. Gaidareva, O. M. Ivleva

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 288 KB

english, 1970

8

[IEEE 2011 International Siberian Conference on Control and Communications (SIBCON 2011) - Krasnoyarsk, Russia (2011.09.15-2011.09.16)] 2011 International Siberian Conference on Control and Communications (SIBCON) - Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers

Vilisova, M. D., Germogenov, V. P., Ponomarev, I. V., Tyazhev, A. V.

Year:

2011

Language:

english

File:

PDF, 625 KB

english, 2011

9

Determination of the position of the

N. A. Chernov, M. D. Vilisova, N. N. Bakin, O. M. Asanov

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 320 KB

english, 1983

10

Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems

M. D. Vilisova, I. V. Ivonin, T. V. Korableva, L. G. Lavrent'eva, V. S. Lukash, S. V. Subach, I. T. Shulepov, M. P. Yakubenya

Journal:

Russian Physics Journal

Year:

1999

Language:

english

File:

PDF, 588 KB

english, 1999

11

Influence of the Substrate Orientation on the Silicon Capture intoA- andB- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 242 KB

english, 2002

12

Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers

L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Crystallography Reports

Year:

2002

Language:

english

File:

PDF, 257 KB

english, 2002

13

The effect of the substrate temperature on the doping level of epitaxial layers of GaA s and on the distribution of impurity in them

L. G. Lavrent'eva, M. D. Vilisova, N. E. Zelenskaya, F. A. Kuznetsov, Yu. M. Rumyantsev

Journal:

Russian Physics Journal

Year:

1971

Language:

english

File:

PDF, 148 KB

english, 1971

14

Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers

I. A. Bobrovnikova, M. D. Vilisova, O. M. Ivleva, V. A. Moskovkin, L. P. Porokhovnichenko, M. V. Turshatova

Journal:

Russian Physics Journal

Year:

1989

Language:

english

File:

PDF, 419 KB

english, 1989

15

Clusters and the Nature of Superconductivity in Ltmbe-GaAs

Bert, N.A., Chaldyshev, V.V., Goloshchapov, S.I., Kozyrev, S.V., Kunitsyn, A.E., Tretyakov, V.V., Veinger, A.I., Ivonin, I.V., Lavrentieva, L.G., Vilisova, M.D., Yakubenya, M.P., Lubyshev, D.I., Preob

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 405 KB

english, 1993

16

Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons

V. N. Brudnyi, M. D. Vilisova, L. P. Porokhovnichenko

Journal:

Russian Physics Journal

Year:

1992

Language:

english

File:

PDF, 303 KB

english, 1992

17

Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films

L. G. Lavrent'eva, M. D. Vilisova, V. A. Moskovkin, S. E. Toropov

Journal:

Russian Physics Journal

Year:

1982

Language:

english

File:

PDF, 421 KB

english, 1982

18

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, I. V. Ivonin, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Russian Physics Journal

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

19

The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

B. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'yeva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach

Journal:

Russian Physics Journal

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

20

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

21

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

Journal:

Year:

2002

Language:

english

File:

PDF, 67 KB

english, 2002

22

Effects of growth conditions on the electrical properties of epitaxial p-n junctions in gallium arsenide

M. D. Vilisova, L. G. Lavrent'eva, L. B. Chernikova

Journal:

Russian Physics Journal

Year:

1967

Language:

english

File:

PDF, 337 KB

english, 1967

23

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, V. V. Chaldyshev, M. P. Yakubeny

Journal:

Russian Physics Journal

Year:

1998

Language:

english

File:

PDF, 1.04 MB

english, 1998

24

ChemInform Abstract: Layers of Gallium Arsenide Doped with Manganese by Epitaxy from the Gas Phase.

VILISOVA, M. D., MALISOVA, E. V., IKONNIKOVA, G. M., KRASIL'NIKOVA, L. M., YABZHANOV, V. B., KHISHCHENKO, S. YU.

Journal:

Year:

1989

File:

PDF, 235 KB

1989

25

Light-induced drift of a one-component gas in a flat channel

V. G. Chernyak, I. V. Chermyaninov, E. A. Vilisova, E. A. Subbotin

Journal:

Journal of Applied Mechanics and Technical Physics

Year:

1994

Language:

english

File:

PDF, 607 KB

english, 1994

26

Light-induced heat and mass transfer in a single-component gas in a capillary

I. V. Chermyaninov, V. G. Chernyak, E. A. Vilisova

Journal:

Journal of Experimental and Theoretical Physics

Year:

2007

Language:

english

File:

PDF, 295 KB

english, 2007

27

Diffusion of chromium into epitaxial gallium arsenide

M. D. Vilisova, E. P. Drugova, I. V. Ponomarev, V. A. Chubirko

Journal:

Year:

2008

Language:

english

File:

PDF, 272 KB

english, 2008

28

High-speed s-diodes with GaAs:Fe structure, produced by gas-phase epitaxy

M. D. Vilisova, G. M. Ikonnikova, O. P. Tolbanov, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1981

Language:

english

File:

PDF, 350 KB

english, 1981

29

[IEEE 2005 Siberian Conference on Control and Communications - Tomsk, Russia (21-22 Oct. 2005)] 2005 Siberian Conference on Control and Communications - Detector Structures Based on Epitaxial Gallium Arsenide Compensated by Chromium

Vilisova, M.D., Tolbanov, O.P., Mokeev, D.Y., Drugova, E.P., Chubirko, V.A., Porokhovnichenko, L.P., Ponomarev, I.V.

Year:

2005

Language:

english

File:

PDF, 268 KB

english, 2005

30

Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

I.A. Bobrovnikova, L.G. Lavrent'eva, M.P. Rusaikin, M.D. Vilisova

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 703 KB

english, 1992

31

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev

Journal:

Year:

1999

Language:

english

File:

PDF, 540 KB

english, 1999

32

Basic laws and causes governing the formation of transitional layers in the autoepitaxy of gallium arsenide

L. G. Lavrent'eva, Yu. G. Kataev, M. D. Vilisova, V. A. Moskovkin

Journal:

Russian Physics Journal

Year:

1971

Language:

english

File:

PDF, 476 KB

english, 1971

33

[IEEE 2005 Siberian Conference on Control and Communications - Tomsk, Russia (21-22 Oct. 2005)] 2005 Siberian Conference on Control and Communications - Detectors for the X-Ray Testing Systems

Ayzenshtat, G.I., Vilisova, M.D., Lelekov, M.A., Ivashchenko, A.I., Mokeev, D.Yu., Porokhovnichenko, L.P., Tolbanov, O.P., Shapoval, L.G.

Year:

2005

Language:

english

File:

PDF, 396 KB

english, 2005

34

Accommodative dependence of thermophoresis in gases in the Knudsen regime

E. A. Vilisova,V. G. Chernyak

Journal:

Atmospheric and Oceanic Optics

Year:

2015

Language:

english

File:

PDF, 292 KB

english, 2015

35

InxAl1 –xN Solid Solutions: Composition Stability Issues

Brudnyi, V. N., Vilisova, M. D., Velikovskiy, L. E.

Journal:

Year:

2019

File:

PDF, 1.83 MB

2019

36

Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2gas-transport system

L. G. Lavrent'eva, M. D. Vilisova, Yu. T. Kataev, L. P. Porokhovnichenko

Journal:

Russian Physics Journal

Year:

1978

Language:

english

File:

PDF, 394 KB

english, 1978

37

X-ray detectors based on epitaxial gallium arsenide

G. I. Ayzenshtat, M. D. Vilisova, E. P. Drugova, M. A. Lelekov, D. Yu. Mokeev, I. V. Ponomarev, L. P. Porokhovnichenko, O. P. Tolbanov, V. A. Chubirko

Journal:

Technical Physics

Year:

2006

Language:

english

File:

PDF, 199 KB

english, 2006

38

Electron and impurity distributions in epitaxial n-type gallium arsenide

L. G. Lavrent'eva, M. D. Vilisova, Yu. G. Kataev, V. A. Moskovkii

Journal:

Russian Physics Journal

Year:

1971

Language:

english

File:

PDF, 324 KB

english, 1971

39

Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2system at various supersaturations

L. G. Lavrent'eva, M. D. Vilisova, V. A. Moskovkin

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 396 KB

english, 1983

40

Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide

L. G. Lavrent'eva, M. D. Vilisova

Journal:

Russian Physics Journal

Year:

1986

Language:

english

File:

PDF, 895 KB

english, 1986

41

Analysis of Russia and other Countries Economic Parameters and Their Connection with the Development of Science Parks

Vilisova, Anna, Qiang, Fu

Journal:

International Journal of Economics and Finance

Year:

2014

File:

PDF, 1.16 MB

2014

42

Formation of submicron growth defects during vapour deposition of GaAs films

L. G. Lavrentieva, I. V. Ivonin, L. M. Krasilnikova, M. D. Vilisova

Journal:

Crystal Research and Technology

Year:

1980

Language:

english

File:

PDF, 608 KB

english, 1980

43

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

L. G. Lavrent’eva, M. D. Vilisova, I. A. Bobrovnikova, S. E. Toropov, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, V. V. Chaldyshev

Journal:

Journal of Structural Chemistry

Year:

2004

Language:

english

File:

PDF, 449 KB

english, 2004

44

Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko, M. P. Ruzaikin, V. N. Ryazanov

Journal:

Russian Physics Journal

Year:

1990

Language:

english

File:

PDF, 382 KB

english, 1990

45

[IEEE 2005 Siberian Conference on Control and Communications - Tomsk, Russia (21-22 Oct. 2005)] 2005 Siberian Conference on Control and Communications - New Photovoltaic Gamma and X-Ray Detector

Ayzenshtat, G.I., Vilisova, M.D., Drugova, E.P., Porokhovnichenko, L.P., Chubirko, V.A., Mokeev, D.Y.

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

46

Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers, in dependence on the growth time in an iodine system

L. G. Lavrent'eva, M. D. Vilisova, I. V. Ivonin, L. M. Krasil'nikova, F. A. Kuznetsov, Yu. M. Rumyantsev, M. P. Yakubenya

Journal:

Russian Physics Journal

Year:

1973

Language:

english

File:

PDF, 1.55 MB

english, 1973

47

Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy

M. D. Vilisova, L. G. Lavrent'eva, L. P. Porokhovnichenko, N. A. Chernov

Journal:

Russian Physics Journal

Year:

1988

Language:

english

File:

PDF, 362 KB

english, 1988

48

Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities

M. D. Vilisova, Yu. G. Kataev, N. A. Chernov, I. A. Bobrovnikova, I. V. Teterkina, L. G. Lavrent'eva

Journal:

Russian Physics Journal

Year:

1995

Language:

english

File:

PDF, 337 KB

english, 1995

49

Investigation of transitional layers in epitaxial gallium arsenide. Effect of the substrate processing method on the electron and dopant distributions

L. G. Lavrent'eva, M. D. Vilisova, Yu. G. Kataev, Yu. M. Rumyantsev, A. D. Shumkov

Journal:

Russian Physics Journal

Year:

1973

Language:

english

File:

PDF, 177 KB

english, 1973

50

Local impurity inhomogeneities in autoepitaxial layers of gallium arsenide

M. D. Vilisova, L. G. Lavrent'eva, L. P. Porokhovnichenko, A. N. Dorokhov, A. I. Saprykin

Journal:

Russian Physics Journal

Year:

1978

Language:

english

File:

PDF, 355 KB

english, 1978

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